Overlay and critical dimension control in 100-nm ULSI processes using TaBN X-ray masks and XRA X-ray stepper

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4343, Issue , 2001, Pages 155-163

  Fujii, K ^a   Tanaka, Y ^a   Iwamoto, T ^a   Tsuboi, S ^a   Sumitani, H ^a   Taguchi, T ^a   Suzuki, K ^a   Matsui, Y ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Critical dimension control; Overlay; Stepper; X ray lithography; X ray mask

Indexed keywords

ANODIC OXIDATION; DEPOSITION; ELECTRON BEAMS; ELECTRON LENSES; ERROR ANALYSIS; GLASS BONDING; IMAGE ANALYSIS; MASKS; OPTICAL VARIABLES CONTROL; PATTERN RECOGNITION; SILICON CARBIDE; SUBSTRATES; SURFACE PHENOMENA; X RAY ANALYSIS; X RAY LITHOGRAPHY;

CRITICAL DIMENSION (CD) CONTROL;

ULSI CIRCUITS;

EID: 0034763981     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436645     Document Type: Conference Paper

References (13)

1. Performance of x-ray stepper for next-generation lithography
2. EB-X3: New electron-beam x-ray mask writer
3. Application of two-wavelength optical heterodyne alignment system in XS-1
4. Overlay evaluation of proximity x-ray lithography in 100 nm device fabrication
5. Precise delineation characteristics of advanced electron beam mask writer EB-X3 for fabricating 1 xx-ray masks
6. Patterning performance of EB-X3 x-ray mask writer
7. Technology and performance of the Canon XRA-1000 production x-ray stepper
8. 4B absorber for x-ray masks
9. Progress in SiC membrane for x-ray masks
10. Improving x-ray mask pattern placement accuracy by correcting process distortion in electron beam writing
11. Alignment mark optimization to reduce tool- and wafer-induced shift for XRA-1000
12. Mask error factor in proximity x-ray lithography
13. Critical-dimension control for 100 nm patterns in x-ray lithography