Comparison of continuous-wave terahertz wave generation and bias-field-dependent saturation in GaAs:O and LT-GaAs antennas

Optics Letters

Volumn 34, Issue 7, 2009, Pages 935-937

  Chen, Kejian ^a   Li, Yu Tai ^b   Yang, Mong Huan ^b   Cheung, Wing Yiu ^a   Pan, Ci Ling ^a,b   Chan, Kam Tai ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; GALLIUM ARSENIDE; TEMPERATURE; TERAHERTZ WAVES;

ANNEALING PROCESS; BIAS FIELD; CONTINUOUS-WAVE TERAHERTZ; ELECTRON SATURATION VELOCITY; LOW-TEMPERATURE-GROWN GAAS; PHOTOCONDUCTIVE ANTENNAS; TESTING CONDITIONS; THEORETICAL MODELING;

SEMICONDUCTING GALLIUM;

EID: 66349131344     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.34.000935     Document Type: Article

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