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Volumn 24, Issue 3, 2006, Pages 774-777
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Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources
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Author keywords
[No Author keywords available]
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Indexed keywords
ION IMPLANTATION;
LASER PULSES;
LIGHT ABSORPTION;
LIGHT EMITTING DIODES;
PHOTOCONDUCTIVITY;
RAPID THERMAL ANNEALING;
BIAS VOLTAGE;
LASER EXCITATION;
TERAHERTZ EMISSION PROPERTIES;
TERAHERTZ EMITTERS;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 33646563457
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.2183284 Document Type: Article |
Times cited : (24)
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References (19)
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