-
1
-
-
24944437024
-
Low Temperature Grown GaAs and Related Materials
-
Dec.
-
Anonymous. Special Issue on Low Temperature Grown GaAs and Related Materials. J. Electronic Mater. 22(12) Dec. 1993.
-
(1993)
J. Electronic Mater.
, vol.22
, Issue.12 SPEC. ISSUE
-
-
-
2
-
-
24944542700
-
Optical and Electron-Beam Control of Semiconductor Switches
-
Anonymous. Special Issue on the Optical and Electron-Beam Control of Semiconductor Switches. IEEE Trans. Electron Devices 37(12) 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, Issue.12 SPEC. ISSUE
-
-
-
3
-
-
36449009679
-
375-GHz-Bandwidth Photoconductive Detector
-
Chen, Y., S. Williamson, T. Brook, F.W. Smith and A.R. Calawa. 375-GHz-Bandwidth Photoconductive Detector. Appl. Phys. Lett. 59 1984-1986, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 1984-1986
-
-
Chen, Y.1
Williamson, S.2
Brook, T.3
Smith, F.W.4
Calawa, A.R.5
-
4
-
-
21544462531
-
Ultrafast Nanoscale Metal-Semiconductor-Metal Photodetectors on Bulk on Low-Temperature Grown GaAs
-
Chou, S.Y., Y. Liu, W. Khalil, T.Y. Hsiang and S. Alexandrou. Ultrafast Nanoscale Metal-Semiconductor-Metal Photodetectors on Bulk on Low-Temperature Grown GaAs. Appl. Phys. Lett. 61(7) 819-821, 1992.
-
(1992)
Appl. Phys. Lett.
, vol.61
, Issue.7
, pp. 819-821
-
-
Chou, S.Y.1
Liu, Y.2
Khalil, W.3
Hsiang, T.Y.4
Alexandrou, S.5
-
5
-
-
0001621790
-
Formation of As Precipitates in GaAs by Ion Implantation and Thermal Annealing
-
Claverie, A., F. Namavar and Z. Liliental-Weber. Formation of As Precipitates in GaAs by Ion Implantation and Thermal Annealing. Appl. Phys. Lett. 62 1271-1273, 1993a.
-
(1993)
Appl. Phys. Lett.
, vol.62
, pp. 1271-1273
-
-
Claverie, A.1
Namavar, F.2
Liliental-Weber, Z.3
-
6
-
-
0027725854
-
Semi Insulating GaAs Made by As Implantation and Thermal Annealing
-
Claverie, A., F. Namavar, Z. Lilienthal-Weber, P. Dreszer and E.R. Weber. Semi Insulating GaAs Made by As Implantation and Thermal Annealing. Mater. Sci. and Eng. B 22 37-40, 1993b.
-
(1993)
Mater. Sci. and Eng. B
, vol.22
, pp. 37-40
-
-
Claverie, A.1
Namavar, F.2
Lilienthal-Weber, Z.3
Dreszer, P.4
Weber, E.R.5
-
7
-
-
0000717881
-
Current-Voltage Characteristics of Proton-Bombarded Au-GaAs Contacts
-
Ejimanya, J.I. Current-Voltage Characteristics of Proton-Bombarded Au-GaAs Contacts. Solid State Electron. 29 841-844, 1986.
-
(1986)
Solid State Electron.
, vol.29
, pp. 841-844
-
-
Ejimanya, J.I.1
-
8
-
-
0025534784
-
Femtosecond Transient Reflectivity Measurements as a Probe for Process-Induced Defects in Silicon
-
Esser, A., W. Kutt, M. Strahnen, G. Maidorn and H. Kurz. Femtosecond Transient Reflectivity Measurements as a Probe for Process-Induced Defects in Silicon. Appl. Surf. Sci. 46 446-450, 1990.
-
(1990)
Appl. Surf. Sci.
, vol.46
, pp. 446-450
-
-
Esser, A.1
Kutt, W.2
Strahnen, M.3
Maidorn, G.4
Kurz, H.5
-
9
-
-
36449008139
-
Subpicosecond Carrier Lifetime in Arsenic-Ion-Implanted GaAs
-
Ganikhanov, F., G.-R. Lin, W.-C. Chen, C.-S. Chang and C.-L Pan. Subpicosecond Carrier Lifetime in Arsenic-Ion-Implanted GaAs. Appl. Phys. Lett. 67 3465-3467, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 3465-3467
-
-
Ganikhanov, F.1
Lin, G.-R.2
Chen, W.-C.3
Chang, C.-S.4
Pan, C.-L.5
-
10
-
-
0026939484
-
Far-Infrared Light Generation at Semiconductor Surfaces and Its Spectroscopic Applications
-
Greene, B.I., P.N. Saeta, D.R. Dykaar, S. Schmitt-Rink and S.L. Chuang. Far-Infrared Light Generation at Semiconductor Surfaces and Its Spectroscopic Applications. IEEE J. Quantum Electron. 28 2302-2312, 1992.
-
(1992)
IEEE J. Quantum Electron.
, vol.28
, pp. 2302-2312
-
-
Greene, B.I.1
Saeta, P.N.2
Dykaar, D.R.3
Schmitt-Rink, S.4
Chuang, S.L.5
-
11
-
-
0001213043
-
Terahertz Radiation Induced by Subband-Gap Femtosecond Optical Excitation of GaAs
-
Hu, B.B., X.-C. Zhang and D.H. Auston. Terahertz Radiation Induced by Subband-Gap Femtosecond Optical Excitation of GaAs. Phys. Rev. Lett. 67 2709-2712, 1991.
-
(1991)
Phys. Rev. Lett.
, vol.67
, pp. 2709-2712
-
-
Hu, B.B.1
Zhang, X.-C.2
Auston, D.H.3
-
13
-
-
0000635114
-
Stoichiometry-Related Defects in GaAs Grown by Molecular-Beam Epitaxy at Low Temperatures
-
Kaminska, M., E.R. Weber, Z. Lilental-Weber, R. Leon and Z.U. Rek. Stoichiometry-Related Defects in GaAs Grown by Molecular-Beam Epitaxy at Low Temperatures. J. Vac. Sci. Technol. B 4 710-713, 1989.
-
(1989)
J. Vac. Sci. Technol. B
, vol.4
, pp. 710-713
-
-
Kaminska, M.1
Weber, E.R.2
Lilental-Weber, Z.3
Leon, R.4
Rek, Z.U.5
-
14
-
-
0029323727
-
Picosecond Carrier Lifetime in GaAs Implanted with High Doses of As ions: An Alternative Material to Low-Temperature GaAs for Optoelectronic Applications
-
Krotkus, A., S. Marcinkevicius, J. Jasinski, M. Kaminska, H.H. Tan and C. Jagadish. Picosecond Carrier Lifetime in GaAs Implanted with High Doses of As ions: an Alternative Material to Low-Temperature GaAs for Optoelectronic Applications. Appl. Phys. Lett. 66 3304-3306, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.66
, pp. 3304-3306
-
-
Krotkus, A.1
Marcinkevicius, S.2
Jasinski, J.3
Kaminska, M.4
Tan, H.H.5
Jagadish, C.6
-
15
-
-
0029323727
-
Picosecond Carrier Lifetime in GaAs Implanted with High Doses of As ions: An Alternative Material to Low-Temperature GaAs for Optoelectronic Applications
-
Krotkus, A., S. Marcinkevicius, J. Jasinski, M. Kaminska, H.H. Tan and C. Jagadish. Picosecond Carrier Lifetime in GaAs Implanted with High Doses of As ions: an Alternative Material to Low-Temperature GaAs for Optoelectronic Applications. Appl. Phys. Lett. 66 3304-3306, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.66
, pp. 3304-3306
-
-
Krotkus, A.1
Marcinkevicius, S.2
Jasinski, J.3
Kaminska, M.4
Tan, H.H.5
Jagadish, C.6
-
16
-
-
21544461833
-
Subpicosecond Carrier Lifetimes in Radiation-Damaged GaAs
-
Lambsdroff, M., J. Kuhl, J. Rosenzweig, A. Axmann and J. Schneider. Subpicosecond Carrier Lifetimes in Radiation-Damaged GaAs. Appl. Phys. Lett. 58 1881-1883, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.58
, pp. 1881-1883
-
-
Lambsdroff, M.1
Kuhl, J.2
Rosenzweig, J.3
Axmann, A.4
Schneider, J.5
-
17
-
-
0031271743
-
Picosecond Responses of Low-dosage Arsenic-Ion-Implanted GaAs Photoconductors
-
Lin, G.-R. and C.-L. Pan. Picosecond Responses of Low-dosage Arsenic-Ion-Implanted GaAs Photoconductors. Appl. Phys. Lett. 71 2901-2903, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 2901-2903
-
-
Lin, G.-R.1
Pan, C.-L.2
-
18
-
-
24944522316
-
Characterization of Optically Excited THz Radiation from Arsenic-ion-implanted GaAs
-
Lin, G.-R. and C.-L. Pan. Characterization of Optically Excited THz Radiation from Arsenic-ion-implanted GaAs. Appl. Phys. B, 1999.
-
(1999)
Appl. Phys. B
-
-
Lin, G.-R.1
Pan, C.-L.2
-
19
-
-
21544467812
-
Electrical Characterization of Arsenic-Ion-Implanted Semi-Insulating GaAs by Current-Voltage Measurement
-
Lin, G.-R., W.-C. Chen, C.-S. Chang and C.-L. Pan. Electrical Characterization of Arsenic-Ion-Implanted Semi-Insulating GaAs by Current-Voltage Measurement. Appl. Phys. Lett. 65 3272-3274, 1994.
-
(1994)
Appl. Phys. Lett.
, vol.65
, pp. 3272-3274
-
-
Lin, G.-R.1
Chen, W.-C.2
Chang, C.-S.3
Pan, C.-L.4
-
20
-
-
0032165766
-
Material and Ultrafast Optical Characterization of High-Resistive Arsenic-Ion-Implanted GaAs
-
Lin, G.-R., W.-C. Chen, S.-C. Chou, C.-S. Chang, K.-H. Wu and C.-L. Pan. Material and Ultrafast Optical Characterization of High-Resistive Arsenic-Ion-Implanted GaAs. IEEE J. Quantum Electron. 34 1740-1748, 1998.
-
(1998)
IEEE J. Quantum Electron.
, vol.34
, pp. 1740-1748
-
-
Lin, G.-R.1
Chen, W.-C.2
Chou, S.-C.3
Chang, C.-S.4
Wu, K.-H.5
Pan, C.-L.6
-
21
-
-
0000027062
-
The Role of Point Defects and Arsenic Precipitates in Carrier Trapping and Recombination in Low-Temperature Grown GaAs
-
Lochtefeld, A.J., M.R. Melloch, J.C.P. Chang and E.S. Harmon. The Role of Point Defects and Arsenic Precipitates in Carrier Trapping and Recombination in Low-Temperature Grown GaAs. Appl. Phys. Lett. 69 1465-1467, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 1465-1467
-
-
Lochtefeld, A.J.1
Melloch, M.R.2
Chang, J.C.P.3
Harmon, E.S.4
-
22
-
-
0001580740
-
Anomalous Hall-Effect Results in Low-Temperature Molecular-Beam-Epitaxy GaAs: Hopping in a Dense EL-2 Like Band
-
Look, D.C., D.C. Walters, M.O. Manasreh, J.R. Sizelove and C.E. Stutz. Anomalous Hall-Effect Results in Low-Temperature Molecular-Beam-Epitaxy GaAs: Hopping in a Dense EL-2 Like Band. Phys. Rev. B 42 3578-3581, 1990.
-
(1990)
Phys. Rev. B
, vol.42
, pp. 3578-3581
-
-
Look, D.C.1
Walters, D.C.2
Manasreh, M.O.3
Sizelove, J.R.4
Stutz, C.E.5
-
23
-
-
0001185983
-
Investigation of Ultrashort Photocarrier Relaxation Times in Low-Temperature-Grown GaAs
-
McIntosh, K.A., K.B. Nichols, S. Verghese and E.R. Brown. Investigation of Ultrashort Photocarrier Relaxation Times in Low-Temperature-Grown GaAs. Appl. Phys. Lett. 70 354-356, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 354-356
-
-
McIntosh, K.A.1
Nichols, K.B.2
Verghese, S.3
Brown, E.R.4
-
24
-
-
0024125535
-
Fabrication of High-Speed GaAs Photoconductive Pulse Generators and Sampling Gates by Ion Implantation
-
Paulter, N.G., A.J. Gibbs and D.N. Sinha. Fabrication of High-Speed GaAs Photoconductive Pulse Generators and Sampling Gates by Ion Implantation. IEEE Trans. Electron. Dev. 65 2343-2348, 1988.
-
(1988)
IEEE Trans. Electron. Dev.
, vol.65
, pp. 2343-2348
-
-
Paulter, N.G.1
Gibbs, A.J.2
Sinha, D.N.3
-
25
-
-
24944487100
-
Fast GaAs Photoconductive Detectors with High Sensitivity Integrated in Coplanar Systems onto GaAs Substrate
-
eds. Leonberger, F.J., C.H. Lee, F. Capasso and H. Morkoc
-
Schumacher, H., U. Salz and H. Beneking. Fast GaAs Photoconductive Detectors with High Sensitivity Integrated in Coplanar Systems onto GaAs Substrate. In Picosecond Electronics and Optoelectronics II, eds. Leonberger, F.J., C.H. Lee, F. Capasso and H. Morkoc, 209-213, 1987.
-
(1987)
Picosecond Electronics and Optoelectronics II
, pp. 209-213
-
-
Schumacher, H.1
Salz, U.2
Beneking, H.3
-
26
-
-
24944576562
-
Time-resolved Optoelectronic Measurements of Nitrogen-Implanted GaAs. Ultrafast Phenomena IX
-
Springer-Verlag Berlin Heidelberg
-
Shen, H., Y. Jin, G.A. Wagoner, X.-C. Zhang and L. Kingsley. Time-resolved Optoelectronic Measurements of Nitrogen-Implanted GaAs. Ultrafast Phenomena IX, Springer Series in Chemical Physics, vol. 60, pp. 372-374, Springer-Verlag Berlin Heidelberg, 1994.
-
(1994)
Springer Series in Chemical Physics
, vol.60
, pp. 372-374
-
-
Shen, H.1
Jin, Y.2
Wagoner, G.A.3
Zhang, X.-C.4
Kingsley, L.5
-
27
-
-
0004359480
-
Proton Implantation into GaAs: Transmission Electron Microscopy Results
-
Shober, T., J. Friedrich and A. Altmann. Proton Implantation into GaAs: Transmission Electron Microscopy Results. J. Appl. Phys. 71 2206-2210, 1992.
-
(1992)
J. Appl. Phys.
, vol.71
, pp. 2206-2210
-
-
Shober, T.1
Friedrich, J.2
Altmann, A.3
-
28
-
-
0004278609
-
-
Chap. 9 Cambridge University Press
-
Smith, R.A. Semiconductors. 2nd edn, Chap. 9 273-279, Cambridge University Press, 1978.
-
(1978)
Semiconductors. 2nd Edn
, pp. 273-279
-
-
Smith, R.A.1
-
29
-
-
21544439151
-
Picosecond GaAs Based Photoconductive Optoelectronic Detectors
-
Smith, F.W., H.Q. Le, V. Diaduik, M.A. Hollis, A.R. Calawa, S. Gupta, M. Frankel, D.R. Dykaar, G.A. Mourou and T.Y. Hsiang. Picosecond GaAs Based Photoconductive Optoelectronic Detectors. Appl. Phys. Lett. 54 890-892, 1989.
-
(1989)
Appl. Phys. Lett.
, vol.54
, pp. 890-892
-
-
Smith, F.W.1
Le, H.Q.2
Diaduik, V.3
Hollis, M.A.4
Calawa, A.R.5
Gupta, S.6
Frankel, M.7
Dykaar, D.R.8
Mourou, G.A.9
Hsiang, T.Y.10
-
30
-
-
0001633021
-
Characterization of Deep Levels and Carrier Compensation Created by Proton Irradiation in Undoped GaAs
-
Tan, H.H., J.S. Williams and C. Jagadish. Characterization of Deep Levels and Carrier Compensation Created by Proton Irradiation in Undoped GaAs. J. Appl. Phys. 78 1481-1487, 1995.
-
(1995)
J. Appl. Phys.
, vol.78
, pp. 1481-1487
-
-
Tan, H.H.1
Williams, J.S.2
Jagadish, C.3
-
31
-
-
0001078367
-
An Optical Correlator Using a Low-Temperature-Grown GaAs Photoconductor
-
Verghese, S., N. Zamdmer, Q. Hu, E.R. Brown and A. Forster. An Optical Correlator Using a Low-Temperature-Grown GaAs Photoconductor. Appl. Phys. Lett. 69 842-844, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 842-844
-
-
Verghese, S.1
Zamdmer, N.2
Hu, Q.3
Brown, E.R.4
Forster, A.5
-
32
-
-
0030230004
-
Ultrafast Response of As-Implanted GaAs Photoconductors
-
Wang, H.-H., P. Grenier, J.F. Whitaker, H. Fujioka, J. Jasinski and Z. Liliental-Weber. Ultrafast Response of As-Implanted GaAs Photoconductors. IEEE J. Sel. Top. Quantum Electron. 2 630-635, 1996.
-
(1996)
IEEE J. Sel. Top. Quantum Electron.
, vol.2
, pp. 630-635
-
-
Wang, H.-H.1
Grenier, P.2
Whitaker, J.F.3
Fujioka, H.4
Jasinski, J.5
Liliental-Weber, Z.6
-
33
-
-
0026238158
-
1.3-μm P-i-N Photodetector Using GaAs with Precipitates (GaAs:As)
-
Warren, A.C., J.M. Woodall, D.T. McInturff, R.T. Hodgson and M.R. Melloch. 1.3-μm P-i-N Photodetector Using GaAs with Precipitates (GaAs:As). IEEE Electron. Device. Lett. 12 527-529, 1991.
-
(1991)
IEEE Electron. Device. Lett.
, vol.12
, pp. 527-529
-
-
Warren, A.C.1
Woodall, J.M.2
McInturff, D.T.3
Hodgson, R.T.4
Melloch, M.R.5
-
34
-
-
0030106494
-
Free Space Electro-Optic Sampling of Terahertz Beams
-
Wu, Q., and X.-C. Zhang. Free Space Electro-Optic Sampling of Terahertz Beams. Appl. Phys. Lett. 68 1604-1606, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 1604-1606
-
-
Wu, Q.1
Zhang, X.-C.2
-
35
-
-
0000607560
-
Optoelectronic Measurement of Semiconductor Surfaces and Interfaces with Femtosecond Optics
-
Zhang X.-C. and D.H. Auston. Optoelectronic Measurement of Semiconductor Surfaces and Interfaces with Femtosecond Optics. J.Appl. Phys. 71 326-338, 1992.
-
(1992)
J.Appl. Phys.
, vol.71
, pp. 326-338
-
-
Zhang, X.-C.1
Auston, D.H.2
-
36
-
-
21544452970
-
Generation of Femtosecond Electromagnetic Pulses from Semiconductor Surfaces
-
Zhang, X.-C., B.-B. Hu, J.T. Darrow and D.H. Auston. Generation of Femtosecond Electromagnetic Pulses from Semiconductor Surfaces. Appl. Phys. Lett. 56 1011-1014, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.56
, pp. 1011-1014
-
-
Zhang, X.-C.1
Hu, B.-B.2
Darrow, J.T.3
Auston, D.H.4
-
37
-
-
36448998944
-
Magnetic Switching of THz beam
-
Zhang, X.-C., Y. Jin, T.D. Hewitt and T. Sangsiri. Magnetic Switching of THz beam. Appl. Phys. Lett. 62 2003-2005, 1993a.
-
(1993)
Appl. Phys. Lett.
, vol.62
, pp. 2003-2005
-
-
Zhang, X.-C.1
Jin, Y.2
Hewitt, T.D.3
Sangsiri, T.4
-
38
-
-
0000898662
-
Influence of Electric and Magnetic Field on THz radiation
-
Zhang, X.-C., Y. Jin, L.E. Kinsley and M. Weiner. Influence of Electric and Magnetic Field on THz radiation. Appl. Phys. Lett. 62 2477-2479, 1993b.
-
(1993)
Appl. Phys. Lett.
, vol.62
, pp. 2477-2479
-
-
Zhang, X.-C.1
Jin, Y.2
Kinsley, L.E.3
Weiner, M.4
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