Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs

Applied Physics Letters

Volumn 89, Issue 7, 2006, Pages

  Mikulics, M ^a,b   Michael, E A ^c   Marso, M ^b   Lepsa, M ^b   Van Der Hart, A ^b   Luth H ^b   Dewald, A ^c   Stancek S ^d   Mozolik, M ^d   Kordos P ^d,e  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c UNIVERSITY OF COLOGNE   (Germany)

^d SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^e INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ELECTRON ENERGY LEVELS; ION IMPLANTATION; SUBSTRATES; THERMAL EFFECTS;

IMPLANTED GAAS; PHOTOMIXERS; POWER SOURCES; TERAHERTZ RADIATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33747504292     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2337523     Document Type: Article

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