Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials

Semiconductor Science and Technology

Volumn 21, Issue 3, 2006, Pages 283-286

  Salem, B ^a   Morris, D ^a   Aimez, V ^a   Beauvais, J ^a   Houde, D ^a  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DETECTORS; ION IMPLANTATION; LIGHT ABSORPTION; OPTICAL PUMPING; SEMICONDUCTING GALLIUM ARSENIDE;

EMITTER/DETECTOR SET-UP; MULTI-ENERGY PROTON IMPLANTATION; SEMI-INSULATING GAAS; TERAHERTZ RADIATION;

ELECTROMAGNETIC FIELD THEORY;

EID: 32844462999     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/21/3/012     Document Type: Article

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