Electrical characteristics of pentacene-based Schottky diodes

Optical Materials

Volumn 21, Issue 1-3, 2003, Pages 433-437

  Lee, Y S ^a   Park, J H ^a   Choi, J S ^a  

^a Hong Ik University   (South Korea)

Author keywords

Capacitance voltage; Current voltage; Metal oxide semiconductor; Pentacene; Schottky diodes

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; ENERGY GAP; MOS DEVICES;

PENTACENE;

SCHOTTKY BARRIER DIODES;

EID: 0037210796     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(02)00178-7     Document Type: Conference Paper

References (13)

1. Kalinowski J. J. Phys. D; Appl. Phys. 32:1999;R179.
2. Lee J.H., Kim S.W., Ju S.H., Lee W.G., Choi J.S., Kim Y.K., Kim W.Y. Synth. Metals. 111-112:2000;63.
3. Schön J.H., Batlogg B. J. Appl. Phys. 89(1):2001;336.
4. Lin Y.Y., Gundlach D., Nelson S., Jackson T. IEEE Trans. Electron Devices. 44(8):1997;1325.
5. Necliudov P., Shur M., Gundlach D., Jackson T. J. Appl. Phys. 88(11):2000;6594.
6. Torsi L., Malitesta C., Sabbatini L., Zambonin P.G., Dodabalapur A., Katz H.E. Mater. Sci. Eng. C. 5:1998;233.
7. J.H. Lee, M.S. thesis, Hongik University, 2000.
8. Meier M., Karg S., Riess W. J. Appl. Phys. 82:1997;1961.
9. Hill I.G., Kahn A. J. Appl. Phys. 84:1998;5583.
10. Tagmouti S., Oueriagli A., Outzourhit A., Khaidar M., Ameziane El.L., Yassar A., Youssoufi H.K., Garnier F. Synth. Metals. 87:1997;109.
11. Campbell I.H., Smith D.L., Ferraris J.P. Appl. Phys. Lett. 66(22):1995;3030.
12. Bastien J., Assadi A., Söderholm S., Hellberg J., Moge M. Synth. Metals. 82:1996;97.
13. Sze S.M. Physics of Semiconductor Devices. second ed. 1981;374 John Wiley & Sons, New York.