Quantum efficiency analysis of InAs-GaSb type-II superlattice photodiodes

IEEE Journal of Quantum Electronics

Volumn 45, Issue 6, 2009, Pages 737-743

  Mou, Shin ^a,b   Li, Jian V ^a,c   Chuang, Shun Lien ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b IBM   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Optical absorption; Photodetectors; Semiconductor device modeling; Semiconductor superlattices (SLs)

Indexed keywords

ABSORPTION COEFFICIENTS; BAND FILLING EFFECTS; BULK SEMICONDUCTORS; DEPLETION REGION; DOPING DENSITIES; DRIFT DIFFUSION; EFFICIENCY ANALYSIS; ELECTRON-BEAM-INDUCED CURRENT TECHNIQUES; INAS; N-TYPE DOPING; OPTICAL ABSORPTION; PHOTOEXCITED ELECTRONS; SEMICONDUCTOR DEVICE MODELING; THEORETICAL MODELS; TRANSPORT PARAMETERS; TYPE-II SUPERLATTICES;

ABSORPTION; GALLIUM ALLOYS; INDIUM ARSENIDE; LIGHT ABSORPTION; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; PHOTODETECTORS; PHOTODIODES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR SWITCHES;

SEMICONDUCTOR SUPERLATTICES;

EID: 66149153504     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2013149     Document Type: Article

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