Substrate removal for high quantum efficiency back side illuminated type-II InAsGaSb photodetectors

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Delaunay, Pierre Yves ^a   Nguyen, Binh Minh ^a   Hofman, Darin ^a   Razeghi, Manijeh ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SUPERLATTICES;

SUBSTRATE REMOVAL; SUPERLATTICE PHOTODETECTORS;

PHOTODETECTORS;

EID: 36849061056     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2821834     Document Type: Article

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