Minority carrier diffusion length and lifetime for electrons in a type-II InAs/GaSb superlattice photodiode

Applied Physics Letters

Volumn 85, Issue 11, 2004, Pages 1984-1986

  Li, Jian V ^a   Chuang, Shun Lien ^a   Jackson, Eric M ^b   Aifer, Edward ^c  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b SFA INC   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DIFFUSION; ELECTRON-BEAM-INDUCED CURRENT (EBIC); SECONDARY ELECTRON (SE); SUPERLATTICE PHOTODIODES;

CARRIER CONCENTRATION; DIFFUSION; ENERGY GAP; GALLIUM COMPOUNDS; MATHEMATICAL MODELS; MONOLAYERS; PHOTODIODES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR JUNCTIONS; SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

INDIUM COMPOUNDS;

EID: 5444231826     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1787598     Document Type: Article

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