The growth of manganese layers on Si(1 0 0) at room temperature: A photoelectron spectroscopy study

Applied Surface Science

Volumn 255, Issue 17, 2009, Pages 7642-7646

  Nolph, C A ^a   Vescovo, E ^b   Reinke, P ^a  

^a University of Virginia   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

Manganese; Photoelectron spectroscopy; Silicide; Silicon(1 0 0); Spintronics

Indexed keywords

FERROMAGNETIC MATERIALS; FERROMAGNETISM; MANGANESE; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; SEMICONDUCTOR DOPING; SILICIDES; SILICON; SPINTRONICS;

FERROMAGNETIC CONTACTS; GROUP-IV SEMICONDUCTORS; MATERIAL SYSTEMS; METALLIC LAYERS; OXIDATION STATE; OXIDE COMPOSITIONS; RESIDUAL OXIDES; ROOM TEMPERATURE DEPOSITION;

SURFACE DEFECTS;

EID: 66049159706     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.04.047     Document Type: Article

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