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Volumn 24, Issue 5, 2008, Pages 585-588
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Synthesis of large scale GaN nanowires by ammoniating Ga2O 3/Co thin films deposited on Si(111) substrates
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Author keywords
Crystal structure; Electron microscopy; Infrared spectroscopy; Semiconductors
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Indexed keywords
CARBON NANOTUBES;
CHARGED PARTICLES;
COBALT;
COMPUTER NETWORKS;
CUBIC BORON NITRIDE;
ELECTRIC WIRE;
ELECTRON MICROSCOPES;
ELECTRON MICROSCOPY;
ELECTRON OPTICS;
ELECTRON SPECTROSCOPY;
ELECTRONS;
GALLIUM;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
GARNETS;
HIGH RESOLUTION ELECTRON MICROSCOPY;
IMAGING TECHNIQUES;
INFRARED SPECTROSCOPY;
MICROSCOPES;
MICROSCOPIC EXAMINATION;
MINERALS;
NANOSTRUCTURED MATERIALS;
NANOSTRUCTURES;
NANOWIRES;
PIGMENTS;
SCANNING;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GALLIUM;
SILICATE MINERALS;
SILICON;
SILICON WAFERS;
SINGLE CRYSTALS;
SULFATE MINERALS;
TECHNOLOGY;
THICKNESS MEASUREMENT;
TRANSITION METALS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
(OTDR) TECHNOLOGY;
FOURIER;
GALLIUM NITRIDE (GAN) NANOWIRES;
GAN NANOWIRE;
GROWTH PROCESSES;
HEXAGONAL WURTZITE STRUCTURE;
HIGH RESOLUTIONS;
INFRARED SPECTROMETRY (IR);
LARGE SCALES;
SI(2 1 1) SUBSTRATES;
SYNTHESIS (OF CHIRAL IONIC LIQUIDS);
X RAY DIFFRACTION (XRD);
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
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EID: 45149109441
PISSN: 02670836
EISSN: None
Source Type: Journal
DOI: 10.1179/174328408X298851 Document Type: Article |
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Times cited : (3)
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References (13)
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