Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN

Chinese Physics

Volumn 14, Issue 4, 2005, Pages 830-833

  Li, Zhong Hui ^a,c,d   Yu, Tong Jun ^b   Yang, Zhi Jian ^b   Feng, Yu Chun ^a   Zhang, Guo Yi ^b   Guo, Bao Ping ^a   Niu, Han Ben ^a  

^a SHENZHEN UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

^c CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^d TIANJIN UNIVERSITY   (China)

Author keywords

InGaN; Multi quantum well; Rapid thermal annealing

Indexed keywords

GALLIUM NITRIDE; MICROSTRUCTURE; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; VAPOR PHASE EPITAXY;

BLUE-SHIFT MECHANISMS; INGAN; MULTI-QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 24144445086     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/14/4/034     Document Type: Article

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