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Volumn 52, Issue 5 III, 2005, Pages 1899-1902

Planar edgeless silicon detectors for the TOTEM experiment

(60)  Ruggiero, G a   Alagoz, E a   Avati, V b   Bassetti, V c   Berardi, V d   Bergholm, V b   Boccone, V c   Bozzo, M c   Buzzo, A c   Catanesi, M G d   Cereseto, R c   Cuneo, S c   Deile, M a   De Oliveira, R a   Eggert, K a   Egorov, N e   Eremin, I f   Ferro, F c   Hasi, J g   Haug, F a   more..


Author keywords

Microstrip; Silicon radiation detectors

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; MICROSTRIP DEVICES; SILICON;

EID: 29144473394     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.856910     Document Type: Article
Times cited : (36)

References (7)
  • 2
    • 38349140570 scopus 로고
    • High voltage planar p-n junctions
    • Aug.
    • Y. C. Kao and E. D. Wolley, "High voltage planar p-n junctions," Proc. IEEE, vol. 55, no. 8, pp. 1409-1414, Aug. 1967.
    • (1967) Proc. IEEE , vol.55 , Issue.8 , pp. 1409-1414
    • Kao, Y.C.1    Wolley, E.D.2
  • 3
    • 0017455141 scopus 로고
    • Theory of breakdown voltage for planar devices with a single field limiting ring
    • Feb.
    • M. S. Adler et al., "Theory of breakdown voltage for planar devices with a single field limiting ring," IEEE Trans. Electron Devices, vol. ED-24, no. 2, pp. 107-113, Feb. 1977.
    • (1977) IEEE Trans. Electron Devices , vol.ED-24 , Issue.2 , pp. 107-113
    • Adler, M.S.1
  • 4
    • 33646091010 scopus 로고
    • Über eine mögliche Art der Elektronenbindung an Kristalloberflächen
    • I. Tamm, "Über eine mögliche Art der Elektronenbindung an Kristalloberflächen," Z. Phys., vol. 76, pp. 849-850, 1932.
    • (1932) Z. Phys. , vol.76 , pp. 849-850
    • Tamm, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.