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Volumn , Issue , 2009, Pages 673-676

Low temperature fabrication process for high-aspect-ratio and multi-compliant mems

Author keywords

[No Author keywords available]

Indexed keywords

3-DIMENSIONAL; DIRECT BONDING; FABRICATION PROCESS; HIGH ASPECT RATIO; HIGH ASPECT RATIO MICROSTRUCTURES; LAYER TRANSFER; LOW TEMPERATURE PLASMAS; LOW-TEMPERATURE FABRICATION; MATERIAL PROPERTY; MICRO MIRROR; MULTIPLE MATERIALS; ON-WAFER; OPTICAL DEFLECTION ANGLE; POLYMERIC SUSPENSIONS; PROCESS FLOWS; PROCESS TECHNOLOGIES; VERTICAL COMB-DRIVE ACTUATOR;

EID: 65949112273     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2009.4805472     Document Type: Conference Paper
Times cited : (7)

References (8)
  • 1
    • 9744270951 scopus 로고    scopus 로고
    • Wafer bonding and layer splitting for microsystems
    • Q.-Y. Tong and U. M. Gosele, "Wafer bonding and layer splitting for microsystems," Adv. Materials, vol.11, pp. 1409-1425, 12 1999. (Pubitemid 129675576)
    • (1999) Advanced Materials , vol.11 , Issue.17 , pp. 1409-1425
    • Tong, Q.-Y.1    Gosele, U.M.2
  • 3
    • 0029406140 scopus 로고
    • "Chemical free room-temperature wafer to wafer direct bonding,"
    • Nov
    • S. N. Farrens, J. R. Dekker, J. K. Smith, and B. E. Roberds, "Chemical Free Room-Temperature Wafer to Wafer Direct Bonding," J. Electrochem. Soc., vol.142, pp. 3949-3955, Nov 1995.
    • (1995) J. Electrochem. Soc. , vol.142 , pp. 3949-3955
    • Farrens, S.N.1    Dekker, J.R.2    Smith, J.K.3    Roberds, B.E.4
  • 6
    • 44949236435 scopus 로고    scopus 로고
    • "MEMS scanning mirror supported by soft polymeric springs and actuated by electrostatic charge separation,"
    • D. Bachmann, S. Kuhne, and C. Hierold, "MEMS scanning mirror supported by soft polymeric springs and actuated by electrostatic charge separation," in Proc. MEMS 2007, pp. 723-726.
    • (2007) In Proc. MEMS 2007 , pp. 723-726
    • Bachmann, D.1    Kuhne, S.2    Hierold, C.3
  • 7
    • 29044446773 scopus 로고    scopus 로고
    • "Maximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect,"
    • Nov-Dec
    • J. Yeom, Y. Wu, J. C. Selby, and M. A. Shannon, "Maximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect," J. Vac. Sci. Technol. B, vol.23, pp. 2319-2329, Nov-Dec 2005.
    • (2005) J. Vac. Sci. Technol. B , vol.23 , pp. 2319-2329
    • Yeom, J.1    Wu, Y.2    Selby, J.C.3    Shannon, M.A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.