Atomic layer deposition (ALD) tungsten nems devices via a novel top-down approach

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2009, Pages 120-123

  Davidson, B D ^a   Chang, Y J ^a   Seghete, D ^b   George, S M ^b   Bright, V M ^a  

^a UCB 450   (United States)

^b UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS COMPATIBLE; HYSTERISIS; LOW TEMPERATURES; NANO ELECTROMECHANICAL SYSTEMS; NANOFABRICATION; NEMS DEVICES; OPERATING CONDITION; STRUCTURAL MATERIALS; TOP-DOWN APPROACH; TOPDOWN; TUNNELING DEVICE;

ATOMIC LAYER DEPOSITION; BUILDING MATERIALS; CARBON NANOTUBES; MECHANICS; MECHATRONICS; MEMS; MICROELECTROMECHANICAL DEVICES; NEMS; TUNGSTEN; TUNNELING (EXCAVATION);

ELECTROSTATIC DEVICES;

EID: 65949110389     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2009.4805333     Document Type: Conference Paper

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