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Volumn 156, Issue 7, 2009, Pages

Monolithic integration of GaAs/InGaAs lasers on virtual Ge substrates via aspect-ratio trapping

(11) Li, J Z a Hydrick, J M a Park, J S a Li, J a Bai, J a Cheng, Z Y a Carroll, M a Fiorenza, J G a Lochtefeld, A a Chan, W b Shellenbarger, Z b

a AmberWave Systems Corporation (United States)

b SARNOFF CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPHASE DOMAINS; DEFECT-FREE; EPITAXIAL LATERAL OVERGROWTH; GAAS; GAAS-BASED OPTOELECTRONIC DEVICES; GAAS/GE; GE SUBSTRATES; GE SURFACES; HIGH SERIES RESISTANCES; INTEGRATION ISSUES; LASER STRUCTURES; MISFIT DEFECTS; MONOLITHIC INTEGRATION; PATTERNED SILICON; ROOM-TEMPERATURE LASING; SIO2 FILM;

ASPECT RATIO; CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; DEFECTS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GERMANIUM; LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; ORGANOMETALLICS; PULSED LASER APPLICATIONS; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM; SILICON OXIDES; SURFACE DEFECTS;

SUBSTRATES;

EID: 65949107059 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3129463 Document Type: Article

Times cited : (17)

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