First room-temperature continuous-wave operation of self-formed InGaAs quantum dot-like laser on Si substrate grown by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 A, 2000, Pages 3860-3862

  Kazi, Zaman Iqbal ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Lifetime; MOCVD; Quantum dot like laser; Si substrate

Indexed keywords

ATMOSPHERIC PRESSURE; CURRENT DENSITY; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; RELIABILITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS; SERVICE LIFE;

CONTINUOUS WAVE OPERATIONS; INDIUM GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034216163     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3860     Document Type: Article

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