Solution epitaxy of TiO2 thin films

Journal of the Electrochemical Society

Volumn 156, Issue 7, 2009, Pages

  Chan, Kelvin Y S ^a   Goh, Gregory K L ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANATASE FILMS; ANATASE TIO2; ATTACHMENT MECHANISM; DIELECTRIC DISPERSION; HIGHER TEMPERATURES; HYDROXYL GROUPS; INTERFACIAL POLARIZATION; LIQUID-PHASE DEPOSITION; NANO-SIZED CRYSTALLITES; NUCLEATION MECHANISM; ORDER OF MAGNITUDE; OUT-OF-PLANE; SINGLE-CRYSTAL SRTIO3 SUBSTRATE; TIO2 THIN FILMS; WATER MOLECULE;

ALIGNMENT; CRYSTAL GROWTH; EPITAXIAL GROWTH; TITANIUM DIOXIDE; TITANIUM OXIDES;

EPITAXIAL FILMS;

EID: 65949106810     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3125766     Document Type: Article

References (37)

1. S. K. Kim, G. -J. Choi, S. Y. Lee, M. Seo, S. W. Lee, J. H. Han, H. -S. Ahn, S. Han, and C. S. Hwang, Adv. Mater. (Weinheim, Ger.) 0935-9648, 20, 1429 (2008). 10.1002/adma.200701085
2. T. Sato, K. Baba, T. Hirozawa, and S. Kawakami, IEEE J. Quantum Electron. 0018-9197, 29, 175 (1993). 10.1109/3.199257
3. Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow, S. Koshihara, and H. Koinuma, Science 0036-8075, 291, 854 (2001). 10.1126/science.1056186
4. M. Murakami, Y. Matsumoto, K. Nakajima, T. Makino, Y. Segawa, T. Chikyow, P. Ahmet, M. Kawasaki, and H. Koinuma, Appl. Phys. Lett. 0003-6951, 78, 2664 (2001). 10.1063/1.1365412
5. S. Yamamoto, T. Sumita, A. M. Sugiharuto, and H. Naramoto, Thin Solid Films 0040-6090, 401, 88 (2001). 10.1016/S0040-6090(01)01636-4
6. M. Schuisky, A. Hrsta, A. Aidla, K. Kukli, A. -A. Kiisler, and J. Aarik, J. Electrochem. Soc. 0013-4651, 147, 3319 (2000). 10.1149/1.1393901
7. W. Sugimura, A. Yamazaki, H. Shigetani, J. Tanaka, and T. Mitsuhashi, Jpn. J. Appl. Phys., Part 1 0021-4922, 36, 7358 (1997). 10.1143/JJAP.36.7358
8. S. Tanemura, L. Miao, P. Jin, K. Kaneko, A. Terai, and N. Nabatova-Gabain, Appl. Surf. Sci. 0169-4332, 212-213, 654 (2003). 10.1016/S0169-4332(03)00015-1
9. S. Chen, M. G. Mason, H. J. Gysling, G. R. Paz-Pujalt, T. N. Blanton, T. Castro, K. M. Chen, C. P. Fictorie, W. L. Gladfelter, A. Franciosi, J. Vac. Sci. Technol. A 0734-2101, 11, 2419 (1993). 10.1116/1.578587
10. H. S. Jung, J. -K. Lee, G. Lee, B. S. Kang, Q. Jia, M. Nastasi, J. H. Noh, C. -M. Cho, and S. H. Yoon, Langmuir 0743-7463, 24, 2695 (2008). 10.1021/la702379y
11. K. Y. S. Chan and G. K. L. Goh, Thin Solid Films 0040-6090, 516, 5582 (2008). 10.1016/j.tsf.2007.07.068
12. Z. Zhang, J. Mater. Res. 0884-2914, 20, 292 (2005). 10.1557/JMR.2005.0036
13. G. K. L. Goh, X. Q. Han, C. P. K. Liew, and C. S. S. Tay, J. Electrochem. Soc. 0013-4651, 152, C532 (2005). 10.1149/1.1943590
14. B. Ma, G. K. L. Goh, J. Ma, and T. J. White, J. Electrochem. Soc. 0013-4651, 154, D557 (2007). 10.1149/1.2769828
15. B. Ma, G. K. L. Goh, and J. Ma, J. Electroceram. 1385-3449, 16, 441 (2006). 10.1007/s10832-006-9894-0
16. R. Lee Penn, G. Oskam, T. J. Strathmann, P. C. Searson, A. T. Stone, and D. R. Veblen, J. Phys. Chem. B 1089-5647, 105, 2177 (2001). 10.1021/jp003570u
17. M. Shandalov and Y. Golan, Chem. Mater. 0897-4756, 18, 3593 (2006). 10.1021/cm061000m
18. R. H. Schmitt, E. L. Glove, and R. D. Brown, J. Am. Chem. Soc. 0002-7863, 82, 5292 (1960). 10.1021/ja01505a005
19. S. Deki, Y. Aoi, O. Hiroi, and A. Kajinami, Chem. Lett. 0366-7022, 25, 433 (1996). 10.1246/cl.1996.433
20. A. Dutschke, C. Diegelmann, and P. Lobmann, J. Mater. Chem. 0959-9428, 13, 1058 (2003). 10.1039/b212535h
21. J. -G. Yu, H. -G. Yu, B. Cheng, X. -J. Zhao, J. C. Yu, and W. -K. Ho, J. Phys. Chem. B 1089-5647, 107, 13871 (2003). 10.1021/jp036158y
22. S. Tokita, N. Tanaka, and H. Saitoh, Jpn. J. Appl. Phys., Part 2 0021-4922, 39, L169 (2000). 10.1143/JJAP.39.L169
23. C. K. Ong and S. J. Wang, Appl. Surf. Sci. 0169-4332, 185, 47 (2001). 10.1016/S0169-4332(01)00589-X
24. R. J. Kennedy and P. A. Stampe, J. Cryst. Growth 0022-0248, 252, 333 (2003). 10.1016/S0022-0248(02)02514-9
25. M. Kawasaki, K. Takahashi, T. Maeda, R. Tsuchiya, M. Shinohara, O. Ishiyama, T. Yonezawa, M. Yoshimoto, and H. Koinuma, Science 0036-8075, 266, 1540 (1994). 10.1126/science.266.5190.1540
26. G. K. L. Goh, S. M. Haile, C. G. Levi, and F. F. Lange, J. Mater. Res. 0884-2914, 17, 3168 (2002). 10.1557/JMR.2002.0458
27. C. K. Tan, G. K. L. Goh, D. Z. Chi, A. C. W. Lu, and B. K. Lok, J. Electroceram. 1385-3449, 16, 581 (2006). 10.1007/s10832-006-9923-z
28. R. Sanjines, H. Tang, H. Berger, F. Gozzo, G. Margaritondo, and F. Levy, J. Appl. Phys. 0021-8979, 75, 2945 (1994). 10.1063/1.356190
29. B. S. Jeong, D. P. Norton, J. D. Budai, and G. E. Jellison, Thin Solid Films 0040-6090, 446, 18 (2004). 10.1016/S0040-6090(03)01238-0
30. B. S. Jeong, J. D. Budai, and D. P. Norton, Thin Solid Films 0040-6090, 422, 166 (2002). 10.1016/S0040-6090(02)00719-8
31. S. Hirano, K. Masuya, and M. Kuwabra, J. Phys. Chem. B 1089-5647, 108, 4576 (2004). 10.1021/jp038014p
32. C. Kormann, D. W. Bahnemann, and M. R. Hoffmann, J. Phys. Chem. 0022-3654, 92, 5196 (1988). 10.1021/j100329a027
33. W. Choi, A. Termin, and M. R. Hoffmann, J. Phys. Chem. 0022-3654, 98, 13669 (1994). 10.1021/j100102a038
34. C. K. Tan, G. K. L. Goh, and W. L. Cheah, Thin Solid Films 0040-6090, 515, 6577 (2007). 10.1016/j.tsf.2006.11.109
35. A. T. Chien, X. Xu, J. H. Kim, J. Sachleben, J. S. Speck, and F. F. Lange, J. Mater. Res. 0884-2914, 14, 3330 (1999). 10.1557/JMR.1999.0451
36. B. H. Park, L. S. Li, B. J. Gibbons, J. Y. Huang, and Q. X. Jia, Appl. Phys. Lett. 0003-6951, 79, 2797 (2001). 10.1063/1.1412822
37. T. Morimoto and T. Iwaki, J. Chem. Soc., Faraday Trans. 1 0300-9599, 83, 943 (1987). 10.1039/f19878300943