Electrical properties of GaAsN film grown by chemical beam epitaxy

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 343-346

  Nishimura, K ^a   Suzuki, H ^a   Saito, K ^a   Ohshita, Y ^a   Kojima, N ^a   Yamaguchi, M ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Chemical beam epitaxy; FTIR; GaAsN; Hole concentration

Indexed keywords

CHEMICAL BEAM EPITAXY; ELECTRIC PROPERTIES; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HOLE CONCENTRATION; HYDROGEN BONDS; IMPURITIES; SEMICONDUCTING GALLIUM ARSENIDE; VACANCIES;

ABSORPTION PEAKS; LOCAL VIBRATIONAL MODES (LVM); NITROGEN-HYDROGEN BOND;

THIN FILMS;

EID: 36048966029     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.183     Document Type: Article

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