SCOPUS 정보 검색 플랫폼

Nanotechnology

Volumn 20, Issue 18, 2009, Pages

Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation

(6) Antonova, I V a Cherkov, A G a Skuratov, V A b Kagan, M S c Jedrzejewski, J d Balberg, I d

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

b JOINT INSTITUTE FOR NUCLEAR RESEARCH (Russian Federation)

c INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS (Russian Federation)

d HEBREW UNIVERSITY OF JERUSALEM (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS; DIMENSIONAL ARRAYS; DIMENSIONAL EFFECTS; HIGH-ENERGY ION IRRADIATIONS; HIGH-ENERGY IONS; ION IRRADIATIONS; ION TRACKS; LOW FREQUENCIES; SI NANOCRYSTALLITES; SI QUANTUM DOTS; SPATIAL DISTRIBUTIONS; THREE-DIMENSIONAL SYSTEMS; TWO-DIMENSIONAL ARRAYS;

CHARGE TRANSFER; CHEMICAL MODIFICATION; EXCITATION ENERGY; ION EXCHANGE; IONS; IRRADIATION; SEMICONDUCTOR QUANTUM DOTS; SILICON COMPOUNDS; THREE DIMENSIONAL;

NANOCRYSTALLITES;

ION; NANOCRYSTAL; NANOMATERIAL; QUANTUM DOT; SILICON; HEAVY ION;

ARTICLE; ELECTRIC CAPACITANCE; IRRADIATION; NANOTECHNOLOGY; PRIORITY JOURNAL; TRANSMISSION ELECTRON MICROSCOPY; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; RADIATION DOSE; RADIATION EXPOSURE; SURFACE PROPERTY;

COMPUTER SIMULATION; HEAVY IONS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MOLECULAR CONFORMATION; NANOTECHNOLOGY; PARTICLE SIZE; QUANTUM DOTS; RADIATION DOSAGE; SILICON; SURFACE PROPERTIES;

EID: 65549102541 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/20/18/185401 Document Type: Article

Times cited : (17)

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