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Volumn 90, Issue 18-19, 2006, Pages 3244-3250

Requirements of PECVD SiNx:H layers for bulk passivation of mc-Si

Author keywords

Multi crystalline; Passivation; Silicon nitride

Indexed keywords

DIFFUSION; HYDROGENATION; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON SOLAR CELLS; SOLAR ENERGY;

EID: 33748306067     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2006.06.024     Document Type: Article
Times cited : (41)

References (8)
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    • 0036953319 scopus 로고    scopus 로고
    • B.L. Sopori, Y. Zhang, R. Reedy, Proceedings of the 29th IEEE PVSC, New Orleans, USA, 2002, pp. 222-226.
  • 4
    • 6444223145 scopus 로고    scopus 로고
    • H.F.W. Dekkers, S. De Wolf, G. Agostinelli, J. Szlufcik, T. Pernau, W.M. Arnoldbik, H.D. Goldbach, R.E.I. Schropp, Proceedings of 3rd World Conference on Photovoltaic Energy Conversion, Osaka, May 2003, p. 983.
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    • J. Hong, W.M.M. Kessels, W.J. Soppe, H.C. Rieffe, A.W. Weeber, M.C.M. van de Sanden, Proceedings of 3rd World Conference on Photovoltaic Energy Conversion, Osaka, May 2003, p. 1158.
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    • A. Kenanoglu, D. Borchert, C. Baliff, S. Peters, T. Zerres, M. Rinio, D.M. Huljic, Proceedings of 3rd World Conference on Photovoltaic Energy Conversion, Osaka, May 2003, p. 1518.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.