3C-SiC heteroepitaxy on (100), (111) and (110) Si using Trichlorosilane (TCS) as the silicon precursor

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 243-246

  Anzalone, R ^a,b   Severino, A ^a,b   D'Arrigo, G ^a   Bongiorno, C ^a   Fiorenza, P ^a   Foti, G ^b   Condorelli, G ^c   Mauceri, M ^c   Abbondanza, G ^c   La Via, F ^a  

^a CNR   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c Epitaxial Technology Center   (Italy)

Author keywords

3C SiC growth process; Heteroepitaxy; Trichlorosilane

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHLORINE COMPOUNDS; EPITAXIAL GROWTH; FILM GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICON; STACKING FAULTS; SUBSTRATES; X RAY DIFFRACTION;

3C-SIC GROWTH PROCESS; 3C-SIC HETEROEPITAXY; GROWTH PRECURSORS; GROWTH PROCESS; SI SUBSTRATES; SIC GROWTH; SILICON GROWTH; SILICON PRECURSORS; SUBSTRATE ORIENTATION; TRICHLOROSILANES;

SILICON CARBIDE;

EID: 63849265859     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.243     Document Type: Conference Paper

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