Inverted staggered poly-Si thin-film transistor with planarized SOG gate insulator

IEEE Electron Device Letters

Volumn 29, Issue 3, 2008, Pages 235-237

  Cheon, Jun Hyuk ^a   Bae, Jung Ho ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Inverted staggered (IS); Low temperature polycrystalline silicon (poly Si) (LTPS); Metal induced crystallization using a cap layer (MICC); Planarization; Spin on Glass (SOG); Thin film transistor (TFT)

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; GATES (TRANSISTOR); POLYSILICON;

FIELD-EFFECT MOBILITY; INVERTED STAGGERED; METAL-INDUCED CRYSTALLIZATION USING A CAP LAYER; PLANARIZATION; SPIN-ON-GLASS;

THIN FILM TRANSISTORS;

EID: 40749099056     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.915623     Document Type: Article

References (11)

1. Y. M. Ha, "P-type technology for large size low temperature poly-Si TFT-LCDs," in Proc. Dig. SID, 2000, pp. 1116-1120.
2. M. Stewart, R. S. Howell, L. Pires, and M. K. Hatalis, "Polysilicon TFT technology for active matrix OLED display," IEEE Trans. Electron Device, vol. 48, no. 5, pp. 845-851, May 2001.
3. H. Sakamoto, N. Makita, M. Hilkigawa, M. Osame, Y. Tanada, and S. Yamazaki, "2.6 inch HDTV panel using CG silicon," in Proc. Dig. SID 2000, pp. 1190-1193.
4. M. S. Chen, J. S. Chou, and S. C. Lee, "Planarization of amorphous silicon thin film transistors by liquid phase deposition of silicon dioxide," IEEE Trans. Electron Device, vol. 42, no. 11, pp. 1918-1923, Nov. 1995.
5. J. H. Lan and J. Kanicki, "Planarized copper gate hydrogenated amorphous-silicon thin-film transistors for AM-LCD's," IEEE Electron Device Lett., vol. 20, no. 3, pp. 129-131, Mar. 1999.
6. I. Yudasaka, H. Tanaka, and T. Shimoda, "Polysilazane-based spin-on glass for thin-film transistors," in Proc. Dig. Tech. Papers AM-LCD 2005, pp. 79-82.
7. x cap layer," J. Electrochem. Soc., vol. 151, no. 7, pp. G448-G451, 2004.
8. J. H. Choi, D. Y. Kim, B. K. Choo, W. S. Sohn, and J. Jang, "Metal induced lateral crystallization of amorphous silicon through a silicon nitride cap layer," Electrochem. Solid-State Lett., vol. 6, no. 1, pp. G16-G18, Jan. 2003.
9. B. A. Khan and R. Panya, "Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors," IEEE Trans. Electron Devices, vol. 37, no. 7, pp. 1727-1734, Jul. 1990.
10. J. Y. Seto, "The electrical properties of polycrystalline silicon films," J. Appl. Phys., vol. 46, no. 12, pp. 5247-5254, Dec. 1975.
11. B. A. Khan and R. Pandya, "Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors," IEEE Trans. Electron Devices, vol. 37, no. 3, pp. 1727-1733, Jul. 1990.