-
3
-
-
33748634908
-
-
Thelander, C.; Agarwal, P.; Brongersma, S.; Eymery, J.; Feiner, L.; Forchel, A.; Scheffler, M.; Riess, W.; Ohlsson, B.; Gösele, U.; Samuelson, L. Mater. Today 2006, 9, 28.
-
(2006)
Mater. Today
, vol.9
, pp. 28
-
-
Thelander, C.1
Agarwal, P.2
Brongersma, S.3
Eymery, J.4
Feiner, L.5
Forchel, A.6
Scheffler, M.7
Riess, W.8
Ohlsson, B.9
Gösele, U.10
Samuelson, L.11
-
4
-
-
34547350786
-
-
(a) Charlier, J. C.; Blase, X.; Roche, S. Rev. Mod. Phys. 2007, 79, 677.
-
(2007)
Rev. Mod. Phys
, vol.79
, pp. 677
-
-
Charlier, J.C.1
Blase, X.2
Roche, S.3
-
5
-
-
59449093569
-
-
(b) Biercuk, M. J.; Ilani, S.; Marcus, C. M.; McEuen, P. L. Carbon Nanotubes 2008, 111, 455.
-
(2008)
Carbon Nanotubes
, vol.111
, pp. 455
-
-
Biercuk, M.J.1
Ilani, S.2
Marcus, C.M.3
McEuen, P.L.4
-
6
-
-
33646254853
-
-
(a) Bryllert, T.; Wernersson, L. E.; Froberg, L. E.; Samuelson, L. IEEE Electron Device Lett. 2006, 27, 323.
-
(2006)
IEEE Electron Device Lett
, vol.27
, pp. 323
-
-
Bryllert, T.1
Wernersson, L.E.2
Froberg, L.E.3
Samuelson, L.4
-
7
-
-
33749684169
-
-
(b) Lind, E.; Persson, A. I.; Samuelson, L.; Wernersson, L. E. Nano Lett. 2006, 6, 1842.
-
(2006)
Nano Lett
, vol.6
, pp. 1842
-
-
Lind, E.1
Persson, A.I.2
Samuelson, L.3
Wernersson, L.E.4
-
8
-
-
33847049888
-
-
(c) Dayeh, S. A.; Aplin, D. P. R.; Zhou, X. T.; Yu, P. K. L.; Yu. E. T.; Wang. D. L. Small 2007, 3, 326.
-
(2007)
Small
, vol.3
, pp. 326
-
-
Dayeh, S.A.1
Aplin, D.P.R.2
Zhou, X.T.3
Yu, P.K.L.4
Yu, E.T.5
Wang, D.L.6
-
10
-
-
36248972352
-
-
Jiang, X.; Xiong, Q.; Nam, S.; Qian, F.; Li, Y.; Lieber, C. M. Nano Lett. 2007, 7, 3214.
-
(2007)
Nano Lett
, vol.7
, pp. 3214
-
-
Jiang, X.1
Xiong, Q.2
Nam, S.3
Qian, F.4
Li, Y.5
Lieber, C.M.6
-
11
-
-
3242780976
-
-
Thelander, C.; Bjork, M. T.; Larsson, M. W.; Hansen, A. E.; Wallenberg, L. R.; Samuelson, L. Solid State Commun. 2004, 131, 573.
-
(2004)
Solid State Commun
, vol.131
, pp. 573
-
-
Thelander, C.1
Bjork, M.T.2
Larsson, M.W.3
Hansen, A.E.4
Wallenberg, L.R.5
Samuelson, L.6
-
14
-
-
0001304488
-
-
(a) Shea, H. R.; Martel, R.; Avouris, P. Phys. Rev. Lett. 2000, 84, 4441.
-
(2000)
Phys. Rev. Lett
, vol.84
, pp. 4441
-
-
Shea, H.R.1
Martel, R.2
Avouris, P.3
-
15
-
-
0034884295
-
-
(b) Liu, K.; Avouris, P.; Martel, R.; Hsu, W. K. Phys. Rev. B 2001, 63, 161404R.
-
(2001)
Phys. Rev. B
, vol.63
-
-
Liu, K.1
Avouris, P.2
Martel, R.3
Hsu, W.K.4
-
16
-
-
34547657159
-
-
Ruess, F. J.; Weber, B.; Goh, K. E. J.; Klochan, O.; Hamilton, A. R.; Simmons, M. Y. Phys. Rev. B 2007, 76, 085403.
-
(2007)
Phys. Rev. B
, vol.76
, pp. 085403
-
-
Ruess, F.J.1
Weber, B.2
Goh, K.E.J.3
Klochan, O.4
Hamilton, A.R.5
Simmons, M.Y.6
-
17
-
-
35848967812
-
-
Lehnen. P.; Schapers, T.; Kaluza, N.; Thillosen, N.; Hardtdegen, H. Phys. Rev. B 2007, 76, 205307.
-
(2007)
Phys. Rev. B
, vol.76
, pp. 205307
-
-
Lehnen, P.1
Schapers, T.2
Kaluza, N.3
Thillosen, N.4
Hardtdegen, H.5
-
18
-
-
33344478702
-
-
Hansen, E.; Börk, M. T.; Fasth, C.; Thelander, C.; Samuelson, L. Phys. Rev. B 2005, 71, 205328.
-
(2005)
Phys. Rev. B
, vol.71
, pp. 205328
-
-
Hansen, E.1
Börk, M.T.2
Fasth, C.3
Thelander, C.4
Samuelson, L.5
-
19
-
-
0642307818
-
-
Altshuler, B. L.; Aronov, A. G.; Khmelnitzky, D. E. J. Phys. C: Solid State Phys. 1982, 15, 7367.
-
(1982)
J. Phys. C: Solid State Phys
, vol.15
, pp. 7367
-
-
Altshuler, B.L.1
Aronov, A.G.2
Khmelnitzky, D.E.3
-
20
-
-
4244175068
-
-
(a) Wind, S.; Rooks, M. J.; Chandrasekhar, V.; Prober, D. E. Phys. Rev. Lett. 1986, 57, 633.
-
(1986)
Phys. Rev. Lett
, vol.57
, pp. 633
-
-
Wind, S.1
Rooks, M.J.2
Chandrasekhar, V.3
Prober, D.E.4
-
22
-
-
17144457037
-
-
(c) Natelson, D.; Willett, R. L.; West, K. W.; Pfeiffer, L. N. Phys. Rev. Lett. 2001, 86, 1821.
-
(2001)
Phys. Rev. Lett
, vol.86
, pp. 1821
-
-
Natelson, D.1
Willett, R.L.2
West, K.W.3
Pfeiffer, L.N.4
-
23
-
-
0141676310
-
-
(d) Pierre, F.; Gougam, A. B.; Anthore, A.; Pothier, H.; Esteve, D.; Birge, N. O. Phys. Rev. B 2003, 68, 085413.
-
(2003)
Phys. Rev. B
, vol.68
, pp. 085413
-
-
Pierre, F.1
Gougam, A.B.2
Anthore, A.3
Pothier, H.4
Esteve, D.5
Birge, N.O.6
-
24
-
-
4243869426
-
-
(e) Khavin, Y. B.; Gershenson, M. E.; Bogdanov, A. L. Phys. Rev. Lett. 1998, 81, 1066.
-
(1998)
Phys. Rev. Lett
, vol.81
, pp. 1066
-
-
Khavin, Y.B.1
Gershenson, M.E.2
Bogdanov, A.L.3
-
25
-
-
84868936175
-
-
Note that we expect that the influence of contact resistance is small compared with the NW channel resistance in our experiment due to the low contact resistance of InAs NW8 and the relative long (2 μm) NW length in our study. This claim is further supported by the excellent consistency between our data and 1D weak localization theory
-
8 and the relative long (2 μm) NW length in our study. This claim is further supported by the excellent consistency between our data and 1D weak localization theory.
-
-
-
-
26
-
-
31544433411
-
-
Colinge, J. P.; Quinn, A. J.; Floyd, L.; Redmond, G.; Alderman, J. C.; Xiong, W.; Cleavelin, R.; Schulz, T.; Schruefer, K.; Knoblinger, G. IEEE Electron Device Lett. 2006, 27, 120.
-
(2006)
IEEE Electron Device Lett
, vol.27
, pp. 120
-
-
Colinge, J.P.1
Quinn, A.J.2
Floyd, L.3
Redmond, G.4
Alderman, J.C.5
Xiong, W.6
Cleavelin, R.7
Schulz, T.8
Schruefer, K.9
Knoblinger, G.10
-
27
-
-
84868930196
-
-
g (∼1 V) and only appear at T < 10 K. These oscillations resemble the Fabry-Perot interference patterns observed in the conductance of short channel CNT devices. For example, see: Liang, W.; Bockrath, M.; Bozovic, D.; Hafner, J. H.; Tinkham, M.; Park, H. Nature 2001, 441, 665.
-
g (∼1 V) and only appear at T < 10 K. These oscillations resemble the Fabry-Perot interference patterns observed in the conductance of short channel CNT devices. For example, see: Liang, W.; Bockrath, M.; Bozovic, D.; Hafner, J. H.; Tinkham, M.; Park, H. Nature 2001, 441, 665.
-
-
-
-
28
-
-
39249085918
-
-
g spacing is too large for our relatively long channel (2 μm long) device. These oscillations are more likely due to resonant scattering by localized states in nanowire, similar to a previous study of CNT. For example, see: Kong, J.; Yenilmez, E.; Tombler, T. W.; Kim, W.; Dai, H.; Laughlin, R. B.; Liu, L.; Jayanthi, C. S.; Wu, S. Y. Phys. Rev. Lett. 2001, 87, 106801.
-
g spacing is too large for our relatively long channel (2 μm long) device. These oscillations are more likely due to resonant scattering by localized states in nanowire, similar to a previous study of CNT. For example, see: Kong, J.; Yenilmez, E.; Tombler, T. W.; Kim, W.; Dai, H.; Laughlin, R. B.; Liu, L.; Jayanthi, C. S.; Wu, S. Y. Phys. Rev. Lett. 2001, 87, 106801.
-
-
-
-
31
-
-
84868917705
-
-
th ∼ - 15 V.
-
th ∼ - 15 V.
-
-
-
|