Recent Advances of High Voltage AlGaN/GaN Power HFETs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7216, Issue , 2009, Pages

  Uemoto, Yasuhiro ^a   Ueda, Tetsuzo ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

GaN; High voltage; Hole injection; Laser drill; Low on state resistance; Normally off; Sapphire; Si; Via hole

Indexed keywords

GAN; HIGH VOLTAGE; HOLE INJECTION; LASER DRILL; LOW ON-STATE RESISTANCE; NORMALLY-OFF; SI; VIA HOLE;

CORUNDUM; DC GENERATORS; DRILLS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; ELECTRIC FIELDS; ELECTRICITY; ELECTRON INJECTION; GALLIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; HOLE TRAPS; IONIZATION OF GASES; LASERS; MOSFET DEVICES; PASSIVATION; PLASMA ETCHING; POWER ELECTRONICS; PULSED LASER APPLICATIONS; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

GALLIUM NITRIDE;

EID: 65349096746     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.808817     Document Type: Conference Paper

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