Above 500V class superjunction MOSFETs fabricated by deep trench etching and epitaxial growth

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 31-34

  Iwamoto, S ^a   Takahashi, K ^a   Kuribayashi, H ^a   Wakimoto, S ^a   Mochizuki, K ^a   Nakazawa, H ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; ETCHING; LEAKAGE CURRENTS; OPTIMIZATION; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SINGLE CRYSTALS;

DEEP-TRENCH ETCHING; DOPING CONCENTRATIONS; SINGLE CRYSTAL SILICON;

MOSFET DEVICES;

EID: 27744608882     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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