The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure

EPJ Applied Physics

Volumn 46, Issue 2, 2009, Pages

  Ozdemir A F ^a   Kotan, Z ^a   Aldemir, D A ^a   Altndal, S ^b  

^a SULEYMAN DEMIREL UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; C-V CHARACTERISTICS; CAPACITANCE-VOLTAGE CHARACTERISTICS; CHLOROANILINE; CONDUCTIVE POLYMERS; CURRENT VOLTAGES; EMERALDINE SALTS; I-V AND C-V CHARACTERISTICS; I-V CHARACTERISTICS; IDEALITY FACTORS; METAL-ORGANIC COMPOUNDS; P-SI/AL STRUCTURES; PROPIONIC; RICHARDSON CONSTANTS; SCHOTTKY BARRIERS; TEMPERATURE CO-EFFICIENT; TEMPERATURE DEPENDENCES; TEMPERATURE RANGES; THERMOIONIC EMISSIONS; ZERO BIAS;

ACTIVATION ENERGY; CONDUCTING POLYMERS; ORGANIC COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 65249187769     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap/2009035     Document Type: Article

References (29)

1. E.H. Rhoderick, R.H. Williams, Metal-Semiconductor Contacts (Oxford University Press, 1978), pp. 121, 136
2. R.T. Tung, Mater. Sci. Eng. R. 35, 1 (2001)
3. M.F. Ruber, in Molecular Electronics, edited by G.J. Ashwell (Wiley, New York, 1992)
4. Ş. Aydõgan, M. Sãglam, A. T̈ur̈ut, Vacuum 77, 269 (2005)
5. A. G̈ok, B. SarI, J. Appl. Polym. Sci. 84, 1993 (2002)
6. M. Fahlman, W.R. Salaneck, Surf. Sci. 500, 904 (2002)
7. P. Somani, B.B. Kale, D.P. Amalnerkar, Synth. Met. 106, 53 (1999)
8. M. Lonergan, Annu. Rev. Phys. Chem. 55, 257 (2004)
9. F.E. Jones, M.C. Lonergan, J. Chem. Phys. 115, 433 (2001)
10. B. Ong, Y. Wu, L. Jiang, P. Liu, K. Murti, Synth. Met. 142, 49 (2004)
11. P.S. Abthagir, R. Saraswathi, J. Mater. Sci-Mater. Electron. 15, 81 (2004)
12. D. Ma, I.A. Ḧummelgen, B. Hu, F.E. Karasz, X. Jing, L. Wang, F. Wang, Solid State Commun. 112, 251 (1999)
13. A. T̈ur̈ut, F. K̈oleli, J. Appl. Phys. 72, 818 (1992)
14. Z.L. Yuan, X.F. Chen, Z.H. Wang, K.S. Yong, Y. Cao, G.Q. Xu, J. Chem. Phys. 119, 10389 (2003)
15. A. KassIm, Z.B. Basar, H.N.M.E. Mahmud, Proc. Indian Acad. Sci., Chem. Sci. 114, 155 (2002)
16. M. Biber, Physica B 325, 138 (2003)
17. S. Zeyrek, Ş. AltIndal, H. Ÿuzer, M.M. B̈ulb̈ul, Appl. Surf. Sci. 252, 2999 (2006)
18. S.F. Chung, T.C. Wen, A. Gopalan, Mater. Sci. Eng. B 116, 125 (2005)
19. Ş. Aydõgan, M. Sãglam, A. T̈ur̈ut, Appl. Surf. Sci. 250, 43 (2005)
20. J.H.Werner, H.H. G̈uttler, J. Appl. Phys. 69, 1522 (1991)
21. J.P. Sullivan, R.T. Tung, M.R. Pinto, W.R.J. Graham, Appl. Phys. 70, 7403 (1991)
22. S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (Wiley, New York, 1981)
23. S. Zu, R.L. Van Meirhaeghe, C. Detavernier, F. Cardon, G.P. Ru, X.P. Qu, B.Z. Li, Solid-State Electron. 44, 663 (2000)
24. H. Ç etin, E. AyyIldIz, Semicond. Sci. Technol. 20, 625 (2005)
25. Zs.J. Horvath, Solid-State Electron. 39, 176 (1996)
26. R.T. Tung, Appl. Phys. Lett. 58, 2821 (1991)
27. T.C. Lee, T.P. Chen, H.L. Au, S. Fung, C.D. Beling, Phys. Stat. Sol. A 152 (1995)
28. Ş. Karata̧s, Ş. AltIndal, A. T̈ur̈ut, A. ̈Ozmen, Appl. Surf. Sci. 217, 250 (2003)
29. C.A. Dimitriadis, S. Logothetidis, I. Alexandrau, Appl. Phys. Lett. 66, 502 (1995)