Er+ implantation in SnO2:SiO2 layers: Structure changes and light emission

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 8-9, 2009, Pages 1336-1339

  Gaiduk, P I ^a,b   Chevallier, J ^b   Wesch, W ^c   Nylandsted Larsen, A ^b  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b AARHUS UNIVERSITY   (Denmark)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Er ion implantation; Nanoclusters; SnO2:SiO2; TEM

Indexed keywords

EMISSION BEHAVIORS; EMISSION PEAKS; EMISSION PROCESS; ENERGY LEVELS; ER ION IMPLANTATION; FLUENCE; FREE EXCITONS; NANO-STRUCTURING; OXYGEN DEFICIENCIES; RF- MAGNETRON SPUTTERING; ROOM TEMPERATURES; RUTHERFORD BACKSCATTERINGS; SI WAFERS; SNO2:SIO2; STRUCTURE CHANGES; TEM; UNDOPED LAYERS; WIDE BANDS;

CRYSTALLITE SIZE; ERBIUM; ION BOMBARDMENT; ION IMPLANTATION; LIGHT EMISSION; MAGNETRON SPUTTERING; NANOCLUSTERS; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON COMPOUNDS;

EID: 65249186813     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.01.042     Document Type: Article

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