Raman scattering and photoluminescence studies on O+ implanted silicon

Physica B: Condensed Matter

Volumn 337, Issue 1-4, 2003, Pages 36-41

  Prabakaran, R ^a   Kesavamoorthy, R ^b   Amirthapandian, S ^c   Xavier, Francis P ^a  

^a LOYOLA COLLEGE   (India)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^c UNIVERSITY OF MADRAS   (India)

Author keywords

Ion implantation; Photoluminescence; Raman scattering; Silicon

Indexed keywords

AMORPHIZATION; AMORPHOUS SILICON; CRYSTAL LATTICES; ION IMPLANTATION; LASER BEAMS; OXYGEN; PHOTOLUMINESCENCE; PHOTONS; RAMAN SCATTERING; THERMAL CONDUCTIVITY OF SOLIDS;

LASER FLUENCES;

SEMICONDUCTING SILICON;

EID: 0041826950     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(03)00320-X     Document Type: Article

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