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Volumn , Issue , 2006, Pages

A 19-gb/s, 1.8-v optical receiver front-end comprised of a Ge-on-SOI photodiode and a CMOS transimpedance amplifier

Author keywords

[No Author keywords available]

Indexed keywords

MONOLITHIC INTEGRATIONS; RECEIVER FRONT ENDS; SILICON-BASED; TRANS-IMPEDANCE AMPLIFIERS;

EID: 65249107680     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECOC.2006.4800989     Document Type: Conference Paper
Times cited : (1)

References (8)
  • 1
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    • S. M. Csutak, et al., "High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology," IEEE J. Lightwave Techol., vol. 20, pp. 1724-1729, Sept. 2002.
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  • 2
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    • 11Gb/s monolithically integrated silicon optical receiver for 850nm wavelength
    • paper 13.5, San Francisco, CA, USA, Feb
    • R. Swoboda et al., "11Gb/s monolithically integrated silicon optical receiver for 850nm wavelength," in Proc. of ISSCC, paper 13.5, San Francisco, CA, USA, Feb. 2006.
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    • Swoboda, R.1
  • 3
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    • Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth
    • Jul
    • M. Jutzi et al., "Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth", IEEE Photon. Technol. Lett., vol. 17, pp. 1510-1512, Jul. 2005.
    • (2005) IEEE Photon. Technol. Lett , vol.17 , pp. 1510-1512
    • Jutzi, M.1
  • 4
    • 7744243121 scopus 로고    scopus 로고
    • High-speed germanium-on-SOI lateral PIN photodiodes
    • Nov
    • G. Dehlinger et al., "High-speed germanium-on-SOI lateral PIN photodiodes", IEEE Photon. Technol. Lett., vol. 16, pp. 2547-2549, Nov. 2004.
    • (2004) IEEE Photon. Technol. Lett , vol.16 , pp. 2547-2549
    • Dehlinger, G.1
  • 5
    • 33644925836 scopus 로고    scopus 로고
    • Ge on Si p-i-n photodiodes operating at 10 Gbit/s
    • L. Colace et al., "Ge on Si p-i-n photodiodes operating at 10 Gbit/s," Appl. Phys. Lett., vol. 88, 101111, 2006.
    • (2006) Appl. Phys. Lett , vol.88 , pp. 101111
    • Colace, L.1
  • 6
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    • A 15-Gb/s, 2.4 V optical receiver using a Ge-on-SOI photodiode and a CMOS IC
    • to be published
    • C. L. Schow et al., "A 15-Gb/s, 2.4 V optical receiver using a Ge-on-SOI photodiode and a CMOS IC," IEEE Photon. Technol. Lett., 2006, to be published.
    • (2006) IEEE Photon. Technol. Lett
    • Schow, C.L.1
  • 7
    • 65249152870 scopus 로고    scopus 로고
    • A 25-Gb/s transimpedance amplifier in 0.13-μm CMOS
    • to be published
    • C. L. Schow et al., "A 25-Gb/s transimpedance amplifier in 0.13-μm CMOS," IEE Electron. Lett., 2006, to be published.
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  • 8
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    • Germanium on insulator infrared detectors for integrated photonic applications
    • to be published
    • S. J. Koester et al., "Germanium on insulator infrared detectors for integrated photonic applications," IEEE J. Select. Topics Quantum Electron., 2006, to be published.
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    • Koester, S.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.