Azimuthally isotropic irradiance of GaN-based light-emitting diodes with GaN microlens arrays

Optics Express

Volumn 17, Issue 8, 2009, Pages 6148-6155

  Wu, Mount Learn ^a   Lee, Yun Chih ^a   Yang, Shih Pu ^a   Lee, Po Shen ^a   Chang, Jenq Yang ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; MICROLENSES; MICROOPTICS; OPTICAL INSTRUMENT LENSES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ACTIVE REGIONS; AZIMUTH ANGLES; FILLING FACTOR; GAN BASED LED; GAN LAYERS; GAN-BASED LIGHT-EMITTING DIODES; INTENSITY VARIATIONS; MICRO-LENS ARRAYS;

LIGHT EMITTING DIODES;

GALLIUM; GALLIUM NITRIDE;

ANISOTROPY; ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; OPTICAL INSTRUMENTATION; REPRODUCIBILITY; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY; THEORETICAL MODEL;

ANISOTROPY; COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; LENSES; LIGHTING; MINIATURIZATION; MODELS, THEORETICAL; REPRODUCIBILITY OF RESULTS; SEMICONDUCTORS; SENSITIVITY AND SPECIFICITY;

EID: 65149092070     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.006148     Document Type: Article

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