DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

Superlattices and Microstructures

Volumn 45, Issue 6, 2009, Pages 604-611

  Lisesivdin, S B ^a,b   Altuntas, H ^a   Yildiz, A ^c   Kasap, M ^a   Ozbay, E ^b   Ozcelik, S ^a  

^a GAZI UNIVERSITY   (Turkey)

^b BILKENT UNIVERSITY   (Turkey)

^c AHI EVRAN UNIVERSITY   (Turkey)

Author keywords

AlGaAs GaAs; DX center; Hall effect; Modulation doped; QMSA

Indexed keywords

2 DIMENSIONAL ELECTRON GAS (2DEG); AL CONTENTS; ALGAAS/GAAS; ALGAAS/GAAS STRUCTURES; BARRIER HEIGHTS; BULK CARRIERS; BULK CONDUCTIONS; CARRIER DENSITIES; CARRIER TRAPPING; CONDUCTION CHANNELS; DX-CENTER; ENERGY CALCULATIONS; HETEROSTRUCTURES; HIGH TEMPERATURES; MOBILITY SPECTRUM ANALYSIS; MODULATION DOPED; MOLECULAR-BEAM EPITAXIES; QMSA; SIMULATION DATUM;

ACTIVATION ENERGY; ALUMINUM; CARRIER CONCENTRATION; CRYSTAL GROWTH; ELECTRON GAS; GALLIUM; GYRATORS; HALL MOBILITY; INTERFEROMETRY; MAGNETIC FIELDS; MODULATION; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON COMPOUNDS; SPECTRUM ANALYSIS; SPECTRUM ANALYZERS;

GALVANOMAGNETIC EFFECTS;

EID: 64949133409     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2009.02.009     Document Type: Article

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