Photoionization of shallow donor impurities in finite-barrier quantum-well wires

Physica B: Condensed Matter

Volumn 233, Issue 2-3, 1997, Pages 196-200

  Sali, A ^a   Fliyou, M ^a,b   Loumrhari, H ^a  

^a MOULAY ISMAIL UNIVERSITY   (Morocco)

^b Département de Mathématiques et Informatique   (Morocco)

Author keywords

Ga1 XAlxAs; GaAs; Photoionization; Quantum well wires

Indexed keywords

FUNCTIONS; IMPURITIES; PHOTOIONIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

PHOTOIONIZATION CROSS SECTION; POTENTIAL BARRIERS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0031145523     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-4526(97)00305-0     Document Type: Article

References (7)

1. M. Takikawa, K. Kelting, G. Brunthaler, M. Takeshi and J. Komena, J. Appl. Phys. 65 (1989) 3937.
2. M. El-Said and M. Tomak, J. Phys. Chem. Solids 52 (1991) 603.
3. M. El-Said and M. Tomak, Solid State Commun. 82 (1992) 721.
4. K.F. Ilaiwi and M. EL-Said, Phys. Stat. Sol. (b) 187 (1995) 93.
5. M. Lax, in Proc. Atlantic City Conf. on Photoconductivity, 1954 (Wiley, New York, 1956) p. 111.
6. F.A.P. Osorio, M.H. Degani and O. Hipolito, Phys. Rev. B 37 (1988) 1402.
7. A. Onton, in: Festkörperprobleme, Vol. 13, ed. by H.J. Queisser (Vieweg, Braunschweig, 1973) p. 59.