Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors

Journal of Semiconductors

Volumn 30, Issue 3, 2009, Pages

  Zhu, Xiaming ^a   Wu, Huizhen ^a,b   Wang, Shuangjiang ^a   Zhang, Yingying ^a   Cai, Chunfeng ^a   Si, Jianxiao ^a   Yuan, Zijian ^a   Du, Xiaoyang ^c   Dong, Shurong ^c  

^a ZHEJIANG UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

^c ZHEJIANG UNIVERSITY   (China)

Author keywords

N doping; Photoluminescence; Resistivity; Thin film transistors; ZnO

Indexed keywords

ACTIVE CHANNEL LAYERS; AS-GROWN; C-AXIS ORIENTATIONS; FABRICATED DEVICE; GATE INSULATOR; GLASS SUBSTRATES; N-DOPED; N-DOPING; NITROGEN SOURCES; OPTICAL AND ELECTRICAL PROPERTIES; PHOTOLUMINESCENCE INTENSITIES; RADIO FREQUENCY MAGNETRON SPUTTERING; ROOM TEMPERATURE; ZNO;

DOPING (ADDITIVES); ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GLASS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS;

ZINC OXIDE;

EID: 64749115842     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/30/3/033001     Document Type: Article

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