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Journal of Luminescence

Volumn 94-95, Issue , 2001, Pages 417-420

Pressure effect on the binding energies of donors in GaAs/AlxGa1-xAs heterojunctions

(2) Ban, S L a Liang, X X a

a INNER MONGOLIA UNIVERSITY (China)

Author keywords

Donor; GaAs AlxGa1 xAs; Heterojunction; Pressure effect

Indexed keywords

APPROXIMATION THEORY; BINDING ENERGY; CARRIER CONCENTRATION; ELECTRON GAS; EXCITONS; INTERFACES (MATERIALS); PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

IMPURITY COULOMB POTENTIAL;

HETEROJUNCTIONS;

EID: 0011697716 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-2313(01)00316-7 Document Type: Article

Times cited : (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.