Stark effect of donor impurity states in strained heterojunctions under pressure

Wuli Xuebao/Acta Physica Sinica

Volumn 57, Issue 7, 2008, Pages 4459-4465

  Zhang, Min ^a,b   Ban, Shi Liang ^a  

^a INNER MONGOLIA UNIVERSITY   (China)

^b INNER MONGOLIA NORMAL UNIVERSITY   (China)

Author keywords

GaN AlxGa1 xN heterojunction; Impurity state; Pressure; Stark effect

Indexed keywords

EID: 48049105045     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (29)