Bulk-quantity synthesis and electrical properties of SnO2 nanowires prepared by pulsed delivery

Materials Chemistry and Physics

Volumn 115, Issue 2-3, 2009, Pages 660-663

  Chen, Z W ^a,b   Jiao, Z ^a   Wu, M H ^a   Shek, C H ^b   Wu, C M L ^b   Lai, J K L ^b  

^a Institute of Nanochemistry and Nanobiology   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Electrical properties; Electron microscopy; Nanostructures; Semiconductors

Indexed keywords

BULK-QUANTITY SYNTHESIS; ELECTRICAL PROPERTIES; GROWTH DIRECTIONS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; IN FIELDS; PULSED-LASER DEPOSITION TECHNIQUES; ROOM TEMPERATURES; SELECTED AREA ELECTRON DIFFRACTIONS; SEMICONDUCTORS; SI(1 0 0 ); TETRAGONAL RUTILE STRUCTURES; X- RAY DIFFRACTIONS;

CRYSTALS; DIFFRACTION; ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRONS; FIELD EFFECT TRANSISTORS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; OXIDE MINERALS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; THICKNESS MEASUREMENT; TIN; TIN DIOXIDE; TITANIUM OXIDES;

ELECTRIC WIRE;

EID: 64749085775     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2009.01.032     Document Type: Article

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