Metal-ferroelectric thin film devices

Journal of Non-Crystalline Solids

Volumn 299-302, Issue PART 2, 2002, Pages 1311-1315

  Kholkin, A L ^b   Martins, R ^a   Aguas H ^a   Ferreira, I ^a   Silva, V ^a   Smirnova, O A ^b   Costa, M E V ^b   Vilarinho, P M ^b   Fortunato, E ^a   Baptista, J L ^b  

^a Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; CHARGE CARRIERS; ELECTRIC CURRENTS; FERROELECTRIC THIN FILMS; HYSTERESIS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLARIZATION; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; THRESHOLD VOLTAGE;

ELECTRON ACCUMULATION;

THIN FILM DEVICES;

EID: 6444245868     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)01152-8     Document Type: Article

References (15)