Functionality of the ferroelectric/oxide semiconductor interface

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 413-417

  Evans Jr , Joe T ^a   Suizu, Robert I ^a   Boyer, Leonard L ^a  

^a Radiant Technologies Incorporated   (United States)

Author keywords

Ferroelectric oxide; FET

Indexed keywords

AMORPHOUS SILICON; CMOS INTEGRATED CIRCUITS; FERROELECTRIC MATERIALS; INTERFACES (MATERIALS); JUNCTION GATE FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SEMICONDUCTING FILMS; THIN FILMS;

LEAD ZIRCONATE TITANATE (PZT); TRANSISTOR CONDUCTION MODULATION;

SEMICONDUCTOR MATERIALS;

EID: 0031548392     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80116-X     Document Type: Article

References (6)

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4. B.A. Tuttle, D.C. McIntyre, C.H. Seager, T.J. Garino, W.L. Warren, J.T. Evans, R.W. Waldman, MRS Symp. Proc. 310 (1993) 71.
5. C.H. Seager, D.C. Mcintyre, W.L. Warren, B.A. Tuttle, Appl. Phys. Lett. 68 (19) (1996) 2660.
6. C.H. Seager, D.C. McIntyre, B.A. Tuttle, Int. Ferroelect. 7(47) (1995).