Comparative study of hot-wire chemical vapor deposition onto (100) Si Near 600°C: Epitaxial and polycrystalline silicon films

Materials Research Society Symposium Proceedings

Volumn 989, Issue , 2007, Pages 121-125

  Teplin, Charles W ^a   Branz, Howard M ^a   Jones, Kim M ^a   To, Bobby ^a   Iwaniczko, Eugene ^a   Stradins, Paul ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOROSILICATE GLASS; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; EPITAXIAL FILMS; FILM GROWTH; POLYCRYSTALLINE MATERIALS; X RAY DIFFRACTION;

DISLOCATION DEFECTS; REAL-TIME SPECTROSCOPIC ELLIPSOMETRY (RTSE); SUBSTRATE/FILM INTERFACE;

AMORPHOUS SILICON;

EID: 41549122953     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0989-a06-12     Document Type: Conference Paper

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