Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition

Applied Physics Letters

Volumn 72, Issue 23, 1998, Pages 2996-2998

  Bergmann, R B ^a   Zaczek, C ^a   Jensen, N ^a   Oelting, S ^b   Werner, J H ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

^b ANTEC GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000120146     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121519     Document Type: Article

References (18)

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