Highly rugged 30 GHz GaN low-noise amplifiers

IEEE Microwave and Wireless Components Letters

Volumn 19, Issue 4, 2009, Pages 251-253

  Rudolph, Matthias ^a   Chaturvedi, Nidhi ^a   Hirche, Klaus ^b   Würfl, Joachim ^a   Heinrich, Wolfgang ^a   Tränkle, Günther ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b Tesat Spacecom GmbH and Co KG   (Germany)

Author keywords

Amplifier noise; Microwave field effect transistor (FET) amplifiers; Millimeter wave integrated circuits; Robustness; Semiconductor device noise

Indexed keywords

AMPLIFIER NOISE; MICROWAVE FIELD EFFECT TRANSISTOR (FET) AMPLIFIERS; MILLIMETER WAVE INTEGRATED CIRCUITS; ROBUSTNESS; SEMICONDUCTOR DEVICE NOISE;

AUDIO FREQUENCY AMPLIFIERS; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; MESFET DEVICES; MICROWAVE CIRCUITS; MICROWAVES; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES;

FIELD EFFECT TRANSISTORS;

EID: 64249091429     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2009.2015514     Document Type: Article

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