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Volumn , Issue , 2004, Pages 201-203
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Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier
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Author keywords
Amplifier; Gallium nitride; GaN; HEMT; Low noise; MMIC; SiC; Wide bandgap
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Indexed keywords
LOW NOISE AMPLIFIER (LNA);
OHMIC METAL;
SPIRAL INDUCTORS;
WIDE BANDGAP;
AMPLIFIERS (ELECTRONIC);
ELECTRON MOBILITY;
GALLIUM NITRIDE;
MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;
RAPID THERMAL ANNEALING;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SILICON CARBIDE;
TRANSMISSION LINE THEORY;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 21644433656
PISSN: 15508781
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/CSICS.2004.1392536 Document Type: Conference Paper |
Times cited : (12)
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References (8)
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