메뉴 건너뛰기




Volumn , Issue , 2004, Pages 201-203

Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier

Author keywords

Amplifier; Gallium nitride; GaN; HEMT; Low noise; MMIC; SiC; Wide bandgap

Indexed keywords

LOW NOISE AMPLIFIER (LNA); OHMIC METAL; SPIRAL INDUCTORS; WIDE BANDGAP;

EID: 21644433656     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2004.1392536     Document Type: Conference Paper
Times cited : (12)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.