Growth and thermal stability of epitaxial BiFeO3 thin films

Journal of Magnetism and Magnetic Materials

Volumn 321, Issue 11, 2009, Pages 1702-1705

  Toupet, H ^a   Le Marrec, F ^a   Holc, J ^b   Kosec, M ^b   Vilarhino, P ^c   Karkut, M G ^a  

^a Universite de Picardie Jules Verne   (France)

^b JO EF STEFAN INSTITUTE   (Slovenia)

^c UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

BiFeO3 thin film; Multiferroics; Pulsed laser deposition; X ray diffraction

Indexed keywords

AS-GROWN; ATOMIC-FORCE MICROSCOPIES; BIFEO3 THIN FILM; ELEVATED TEMPERATURES; EPITAXIAL THIN FILMS; EX-SITU; HIGH QUALITIES; HIGH VOLATILITIES; IMPURITY PHASIS; LOW PRESSURES; MULTIFERROICS; OUT-OF-PLANE LATTICE PARAMETERS; OXYGEN PRESSURES; PARASITIC PHASIS; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTIONS; SINGLE-PHASE STRUCTURES; TEMPERATURE DEPENDENCES; TEMPERATURE WINDOWS; THERMAL STABILITIES; X-RAY DIFFRACTION MEASUREMENTS;

ELECTRON DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; LASERS; OXYGEN; PHOTODEGRADATION; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; THERMODYNAMIC STABILITY; THIN FILM DEVICES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 64149103908     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2009.02.024     Document Type: Article

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