Electrically pumped quantum post vertical cavity surface emitting lasers

Applied Physics Letters

Volumn 94, Issue 13, 2009, Pages

  Kim, Hyochul ^a   Rakher, Matthew T ^a,d   Bouwmeester, Dirk ^a,b   Petroff, Pierre M ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LEIDEN UNIVERSITY   (Netherlands)

^c University of California   (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MEDIUMS; CONTINUOUS WAVE LASING; CURRENT THRESHOLDS; ELECTRICALLY PUMPED; LASING THRESHOLDS; LOW TEMPERATURES; LOW THRESHOLDS; OXIDE-APERTURED VERTICAL-CAVITY SURFACE-EMITTING LASERS; QUALITY FACTORS; QUANTUM DOT DEVICES; ROOM TEMPERATURES; VERTICAL CAVITY SURFACE EMITTING LASERS;

LASER PULSES; SEMICONDUCTOR QUANTUM DOTS; SURFACE EMITTING LASERS;

PUMPING (LASER);

EID: 64149083765     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3112578     Document Type: Article

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18. If all modes have the same decay rate, Β can be approximated as (λ0 /n) 3 λ0 /8π Vc Δλ. λ0 is a wavelength in free space, n is effective refractive index, Vc is cavity volume, and Δλ is FWHM of the optical gain. With λ0 =990 nm, n=3.2, Vc =3 μ m3, and Δλ=40 nm, Β of ∼0.01 is obtained.