Growth and optical properties of self-assembled InGaAs quantum posts

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 6, 2008, Pages 1785-1789

  Krenner, H J ^a   Pryor, C ^b   He, J ^a   Zhang, J P ^a   Wu, Y ^a   Morris, C M ^c   Sherwin, M S ^c   Petroff, P M ^a  

^a University of California   (United States)

^b UNIVERSITY OF IOWA   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Luminescence; Molecular beam epitaxy; Quantum confined stark effect; Quantum dots; Quantum posts

Indexed keywords

CRYSTAL GROWTH; ELECTRIC DIPOLE MOMENTS; ELECTRONIC STRUCTURE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; QUANTUM CONFINEMENT; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STARK EFFECT;

QUANTUM CONFINED STARK EFFECTS; QUANTUM POSTS; TUNABILITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 41349083741     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.09.165     Document Type: Article

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