Local-loading effect in low-temperature selective epitaxial growth of 4H-SiC by halo-carbon method

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 163-166

  Das, Hrishikesh ^a   Krishnan, Bharat ^a   Melnychuk, Galyna ^a   Koshka, Yaroslav ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

Halo carbon; Low temperature epitaxial growth; SEG; Selective epitaxial growth

Indexed keywords

EPITAXIAL GROWTH; GROWTH RATE; SILICA; SILICON CARBIDE; TEMPERATURE;

HALO-CARBON; LOADING EFFECTS; LOCAL LOADING; LOW TEMPERATURE EPITAXIAL GROWTH; LOWS-TEMPERATURES; NONHOMOGENEITY; RATE ENHANCEMENT; SEG; SELECTIVE EPITAXIAL GROWTH; SELECTIVE-EPITAXIAL GROWTH;

CARBON;

EID: 63849201167     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.163     Document Type: Conference Paper

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