Characteristics of post-nitridation rapid-thermal annealed gate oxide grown on 4H SiC

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 689-692

  Cheong, K Y ^a,b   Bahng, W ^b   Kim, N K ^b  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

^b Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

Electron trap; Interface trap density; Nitrided gate oxide; Oxide breakdown field; Rapid thermal annealing

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON TRAPS; GROWTH (MATERIALS); NITRIDATION; RAPID THERMAL ANNEALING;

INTERFACE TRAP DENSITY; NITRIDED GATE OXIDES; OXIDE BREAKDOWN FIELDS;

OXIDE FILMS;

EID: 27844570088     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.689     Document Type: Conference Paper

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