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Volumn 527-529, Issue PART 1, 2006, Pages 497-500

Deep electron and hole traps in 6H-SiC bulk crystals grown by the halide chemical vapor deposition

(9) Huh, S W a Polyakov, A Y a Chung, H J a Nigam, S a Skowronski, M a Glaser, E R b Carlos, W E b Fanton, M A c Smirnov, N B d

a CARNEGIE MELLON UNIVERSITY (United States)

b NAVAL RESEARCH LABORATORY (United States)

c PENNSYLVANIA STATE UNIVERSITY (United States)

d INSTITUTE OF RARE METALS (Russian Federation)

Author keywords

6H SiC; Deep center; DLTS; HCVD; MCTS

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; HOLE TRAPS; PHOTOLUMINESCENCE; SINGLE CRYSTALS;

HALIDE CHEMICAL VAPOR DEPOSITION (HCVD); LOW TEMPERATURE PHOTOLUMINESCENCE (LTPL); MINORITY CARRIER TRANSIENT SPECTROSCOPY (MCTS); THERMAL ADMITTANCE SPECTROSCOPY (TAS);

SILICON CARBIDE;

EID: 37849050488 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/0-87849-425-1.497 Document Type: Conference Paper

Times cited : (2)

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